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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - APRIL 2002 FEATURES * 400 Volt VCEO FMMT458 E C COMPLEMENTARY TYPE - PARTMARKING DETAIL - FMMT558 B 458 SOT23 SYMBOL V CBO V CEO V EBO IC I CM IB P tot T j:T stg MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 100 100 15 50 MAX. VALUE 400 400 5 225 1 200 500 -55 to +150 UNIT V V V mA A mA mW C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching times SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff UNIT V V V nA nA nA V V V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V IC=50mA, VCE=10V* IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA 300 MHz pF ns ns 5 135 Typical 2260 Typical *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA FMMT458 TYPICAL CHARACTERISTICS IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25C -55C +25C +100C +175C 1.6 1.4 IC/IB=10 1.6 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 300 1.6 1.4 -55C +25C +100C +175C IC/IB=10 VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1.0 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C VCE=10V 1.6 1.4 IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area TBA |
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